Description
The relief surface of a heteroepitaxial substrate made by electron beam lithography using various topologies allows to significantly increase the energy efficiency of the LED by increasing the quantum efficiency.
Technical characteristic:
Efficiency 35%
The wavelength is 460 ± 5 nm
Direct voltage drop at a current of 20 mA 3.3 – 4 V
The differential resistance of the crystal is less than 6 ohm
Leakage currents at a reverse voltage of 3 V less than 10 μA
