Flip-chip blue LED based on gallium nitride


The relief surface of a heteroepitaxial substrate made by electron beam lithography using various topologies allows to significantly increase the energy efficiency of the LED by increasing the quantum efficiency.

Technical characteristic:

Efficiency 35%
The wavelength is 460 ± 5 nm
Direct voltage drop at a current of 20 mA 3.3 – 4 V
The differential resistance of the crystal is less than 6 ohm
Leakage currents at a reverse voltage of 3 V less than 10 μA



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Financing from the federal budget

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